: The rapid enhancement in the power conversion efficiency of perovskite solar cells (PSCs) within a short time frame has introduced challenges related to the instability and toxicity linked with lead (Pb), impeding their progress toward commercial viability. In response, the exploration of Pb-free alternatives, such as CsSnBr3, has garnered substantial research attention. CsSnBr3 stands out as a highly promising contender for fulfilling the role of an absorber layer in solar cell technology, distinguished by its economical nature, robust stability, and impressive efficiency. In this study, CsSnBr3 is employed as an absorber layer, Cu2O as the hole transport layer (HTL), and TiO2, PCBM, WS2, ZnO, SnO2, and IGZO as electron transport layers (ETLs). This work focuses on enhancing the photovoltaic (PV) performance parameters of CsSnBr3-based PSCs using SCAPS-1D numerical simulation. This is achieved by optimizing characteristics (thickness, doping, and defect density) of the light absorber layer, ETLs, and HTL. Additionally, the effects of doping and defect density (Nt) on the PV performance at CsSnBr3/ETL and HTL/CsSnBr3 interfaces are investigated. The device architecture’s performance was significantly influenced by the absorber layer’s thickness, acceptor density, defect density, and the combination of various ETLs and HTLs. Optimized devices employing TiO2, PCBM, WS2, ZnO, SnO2, and IGZO ETLs exhibited PCEs of 21.64, 21.94, 22.43, 21.94, 21.94, and 21.88%, respectively. Mor
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